Rajinder Sandhu
6Patents
4h-index
4Co-inventors
46Inventor score
Filing activity: Jan 26, 2000 → Mar 20, 2012
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8575657B2 | Direct growth of diamond in backside vias for GaN HEMT devices | Electricity | 13 | Active |
| US7041579B2 | Hard substrate wafer sawing process | Electricity | 7 | Expired |
| US8026132B2 | Leakage barrier for GaN based HEMT active device | Electricity | 5 | Active |
| US6245687A | Precision wide band gap semiconductor etching | Electricity | 5 | Expired |
| US8809907B2 | Leakage barrier for GaN based HEMT active device | Electricity | 0 | Expired |
| US8809137B2 | Leakage barrier for GaN based HEMT active device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.