Lifetime measurement of an ultra-thin dielectric layer
US6249139A · kind A · utility
4Cited by
2References
5Claims
0Family size
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Key dates
| Filing date | Sep 9, 1999 |
| Grant date | Jun 19, 2001 |
| Priority date | — |
| Expiry date | Sep 9, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2648
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method is described for taking a lifetime measurement of an ultra-thin dielectric layer. In order to discover the life time of the ultra-thin dielectric layer, the measurement comprises using about one half of a stress voltage to measure a time-dependent leakage current of the ultra-thin dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.