Patent · US Expired

Semiconductor wafer manufacturing method and apparatus for an improved heat exchanger for a photoresist developer

US6250822A · kind A · utility

2Cited by
2References
21Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 4, 2000
Grant dateJun 26, 2001
Priority date
Expiry dateFeb 4, 2020

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB05C11/08
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

Embodiments of the invention comprise a new device and technique to realize an improved temperature control for a chemical photoresist developer utilizing a preexisting integrated single reservoir. This improvement is achieved by providing for a modified temperature control unit and procedure. The temperature control unit preferably comprises a plurality of heat exchanger conduits that are each supplied by an inlet manifold, and then exhausted via an outlet manifold. The temperature control unit preferably extends fully within the modified nozzle unit. By utilizing the improved temperature control unit, a first and second volumetric allocation of developer may be issued so that both may be dispensed within a relatively short period of time upon a photoresist layer surface in a temperature controlled state.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.