Method to create a copper dual damascene structure with less dishing and erosion
US6251786A · kind A · utility
32Cited by
10References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 7, 1999 |
| Grant date | Jun 26, 2001 |
| Priority date | — |
| Expiry date | Sep 7, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dual damascene structure is created in a dielectric layer, the structure contains a barrier layer while a cap layer may or may not be provided over the layer of dielectric for further protection of the dual damascene structure. The surface of the copper in the dual damascene structure is recessed, a thin film is deposited and planarized/partially removed by either CMP or a plasma etch thereby providing a sturdy surface above the copper of the dual damascene structure that prevents dishing and erosion of this surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.