Selective wafer-level testing and burn-in
US6255208A · kind A · utility
6Cited by
17References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 25, 1999 |
| Grant date | Jul 3, 2001 |
| Priority date | — |
| Expiry date | Jan 25, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Selective electrical connections between an electronic component and a test substrate are made using an electrical conductive material. The conductive material of the present invention is a dissolvable material, allowing for rework and repair of a wafer at the wafer-level, and retesting at the wafer-level. In addition, the conductive material may also be used in a permanent package, since the conductive material of the present invention provides complete electrical conductivity and connection between the electronic component and the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.