Dual metal-oxide layer as air bridge
US6261942A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 24, 2000 |
| Grant date | Jul 17, 2001 |
| Priority date | — |
| Expiry date | Jan 24, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for introducing air into the gaps between neighboring conducting structures in a microelectronics fabrication in order to reduce the capacitative coupling between them. A patterned metal layer is deposited on a substrate. The layer is lined with a CVD-oxide. A disposable gap-filling material is deposited over the lined metal layer. A two layer "air-bridge" is formed over the gap-fill by depositing a layer of TiN over a layer of CVD-oxide. This structure is rendered porous by several chemical processes. An oxygen plasma is passed through the porous air-bridge to react with and dissolve the gap-fill beneath it. The reaction products escape through the porous air-bridge resulting in air-filled gaps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.