Reverse electroplating of barrier metal layer to improve electromigration performance in copper interconnect devices

US6261963A · kind A · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Larry Zhao · Niskayuna, US
• Paul R. Besser · Sunnyvale, US
• Eric M. Apelgren · Austin, US
• Christian Zistl · Dresden, DE
• Jonathan B. Smith · Fremont, US

Key dates

• Filing date: Jul 7, 2000
• Grant date: Jul 17, 2001
• Expiry date: Jul 7, 2020

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/927
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method is provided for forming a conductive interconnect, the method comprising forming a first dielectric layer above a structure layer, forming a first opening in the first dielectric layer, and forming a first conductive structure in the first opening. The method also comprises forming a second dielectric layer above the first dielectric layer and above the first conductive structure, forming a second opening in the second dielectric layer above at least a portion of the first conductive structure, the second opening having a side surface and a bottom surface, and forming at least one barrier metal layer in the second opening on the side surface and on the bottom surface. In addition, the method comprises removing a portion of the at least one barrier metal layer from the bottom surface, and forming a second conductive structure in the second opening, the second conductive structure contacting the at least the portion of the first conductive structure. The method further comprises forming the conductive interconnect by annealing the second conductive structure and the first conductive structure.