Easy to remove hard mask layer for semiconductor device fabrication
US6261967A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Feb 9, 2000 |
| Grant date | Jul 17, 2001 |
| Priority date | — |
| Expiry date | Feb 9, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/692
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a patterned shape from a noble metal, in accordance with the present invention, includes forming a noble metal layer over a dielectric layer and patterning a hard mask layer on the noble metal layer. The hard mask layer includes a mask material that is selectively removable relative to the noble metal layer and the dielectric layer and capable of withstanding plasma etching. Alternately, the hard mask material may be consumable during the noble metal layer plasma etching. Plasma etching is performed on the noble metal layer in accordance with the patterned hard mask layer. The hard mask layer is removed such that a patterned shape formed in the noble metal layer remains intact after the plasma etching and the hard mask removal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.