Electrode structure for transistors, non-volatile memories and the like
US6262451A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 1997 |
| Grant date | Jul 17, 2001 |
| Priority date | — |
| Expiry date | Mar 13, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/90
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electrode structure for semiconductor devices includes first electrode material positioned in overlying relationship to the surface of a substrate so as to define a first side wall perpendicular thereto. A nonconductive side wall spacer is formed on the first side wall and defines a second side wall parallel to and spaced from the first side wall. Second electrode material is formed in overlying relationship to the substrate and on the second side wall so as to define a third side wall parallel to and spaced from the second side wall. The first and second electrode materials are connected as first and second electrodes in a common semiconductor device. Additional electrodes can be formed by forming electrode material on additional side walls.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.