Plasma processing method and apparatus with control of rf bias
US6265831A · kind A · utility
37Cited by
12References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 31, 1999 |
| Grant date | Jul 24, 2001 |
| Priority date | — |
| Expiry date | Mar 31, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32174
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A tendency for a discontinuity to occur in the amount of power reflected back to an r.f. bias source of a vacuum plasma processor is overcome by controlling the r.f. bias source output power so the power delivered to plasma in a vacuum processing chamber remains substantially constant. The r.f bias source output power is changed much faster than changes in capacitors of a matching network connecting the r.f. bias power source to an electrode of a workpiece holder processor. A capacitive impedance component of the plasma is determined by optically measuring the thickness of a plasma sheath in the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.