Method of making air gap isolation by making a lateral EPI bridge for low K isolation advanced CMOS fabrication
US6268637A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 22, 1998 |
| Grant date | Jul 31, 2001 |
| Priority date | — |
| Expiry date | Oct 22, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0188
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An isolation structure and a method of making the same are provided. In one aspect, the method includes the steps of forming a trench in a substrate and forming a first insulating sidewall in the trench and a second insulating in the trench in spaced-apart relation to the first insulating sidewall. A bridge layer is formed between the first and the second sidewalls. The bridge layer, the first and second sidewalls, and the substrate define an air gap in the trench. The isolation structure exhibits a low capacitance in a narrow structure. Scaling is enhanced and the potential for parasitic leakage current due to non-planarity is reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.