Post metal etch photoresist strip method
US6271115A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2000 |
| Grant date | Aug 7, 2001 |
| Priority date | — |
| Expiry date | Jun 26, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02071
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved method for removing a photoresist mask from an etched aluminum pattern after etching the pattern in a chlorine containing plasma has been developed. The method is a five step process, in which the first step is in a microwave generated plasma containing O.sub.2 and H.sub.2 O; the second step is in a microwave generated plasma containing O.sub.2 and N.sub.2 ; the third step is in a microwave generated plasma containing H.sub.2 O; the fourth step is in a microwave generated plasma containing O.sub.2 and N.sub.2 ; and the fifth step is in a microwave generated plasma containing H.sub.2 O. The first step which initiates removal of photoresist while simultaneously beginning the passivation process causes residue-free removal of photoresist following etching of aluminum or aluminum-copper layers in chlorine bearing etchants.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.