Method for dual damascene process using electron beam and ion implantation cure methods for low dielectric constant materials
US6271127A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 10, 1999 |
| Grant date | Aug 7, 2001 |
| Priority date | — |
| Expiry date | Jun 10, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/949
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Method for dual damascene metallization of semiconductor workpieces which uses a process for creating an etch stop in an insulator thereby eliminating the need for deposition of an etch stop layer. Electron beam exposure is used to cure the insulator, or material having a low dielectric constant. Application of the electron beam to the low dielectric constant material converts the topmost layer of the low dielectric constant material to an etch stop layer, while rapid thermal heating cures the remainder of the low dielectric constant material. Creation of an etch stop layer in the low dielectric constant material can also be achieved by curing the low dielectric constant material using ion implantation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.