Production method for silicon epitaxial wafer
US6277715A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 28, 1999 |
| Grant date | Aug 21, 2001 |
| Priority date | — |
| Expiry date | May 28, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3225
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a production method for a silicon epitaxial wafer having an internal gettering (IG) capability at a level equal to that of a CZ silicon mirror-finished wafer. In the production method for a silicon epitaxial wafer in which silicon single crystal is epitaxially grown on a silicon wafer; a heat treatment of the silicon wafer is performed at a temperature within .+-.50.degree. C. of a holding temperature for the first stage heat treatment which is to be firstly effected as a heat treatment in the device fabrication process after the epitaxial growth process for a time period equal to or more than a time period in which a precipitate nucleus from interstitial oxygen in the silicon wafer can grow to a size which survives through the epitaxial growth process, prior to the epitaxial growth process, and thereafter, the epitaxial growth is effected; or a heat treatment of the silicon wafer is performed being kept at a temperature within .+-.50.degree. C. of a holding temperature for the first stage heat treatment which is to be at first effected as a heat treatment in the device fabrication process after the epitaxial growth process for a time period equal to or more than a time…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.