Method of forming a shallow groove isolation structure
US6284625A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 5, 1999 |
| Grant date | Sep 4, 2001 |
| Priority date | — |
| Expiry date | Nov 5, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/978
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device includes the steps of (1) forming a pad oxide film of 5 nm or more on a circuit forming surface of a semiconductor substrate; (2) forming an oxidation inhibition film on the pad oxide film; (3) forming grooves of a given depth with the oxidation inhibition film as a mask; (4) receding the pad oxide film; (5) oxidizing the grooves formed on the semiconductor substrate in the range of 0<C.ltoreq.0.88t-924 in which the oxidizing atmosphere is dry oxidation (H2/O2.apprxeq.0), the oxygen partial pressure in the air corresponding to the oxygen partial pressure ratio is C %, and the oxidizing temperature is t (.degree. C.); (6) burying an insulating film inside of the oxidized groove; (7) removing the buried insulating film formed on the oxidation inhibition film; (8) removing the oxidation inhibition film formed on a circuit forming surface of the semiconductor substrate; and (9) removing the pad oxide film formed on the circuit forming surface of said semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.