Non-metallic barrier formation for copper damascene type interconnects
US6284657A · kind A · utility
107Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 25, 2000 |
| Grant date | Sep 4, 2001 |
| Priority date | — |
| Expiry date | Feb 25, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76831
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming dual-damascene type conducting interconnects with non-metallic barriers that protect said interconnects from fluorine out-diffusion from surrounding low-k, fluorinated dielectric materials. One embodiment of the method is particularly suited for forming such interconnects in microelectronics fabrications of the sub 0.15 micron generation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.