Magnetoresistive (MR) sensor element with enhanced resistivity sensitivity and enhanced magnetic exchange bias
US6291087A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 1999 |
| Grant date | Sep 18, 2001 |
| Priority date | — |
| Expiry date | Jun 21, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1121
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method for forming a magnetoresistive (MR) sensor element, and a magnetoresistive sensor element fabricated in accord with the method. There is first provided a substrate. There is then formed over the substrate a magnetoresistive (MR) layer comprising: (1) a bulk layer of the magnetoresistive (MR) layer formed of a first magnetoresistive (MR) material optimized to provide an enhanced magnetoresistive (MR) resistivity sensitivity of the magnetoresistive (MR) layer; and (2) a surface layer of the magnetoresistive (MR) layer formed of a second magnetoresistive (MR) material optimized to provide an enhanced magnetic exchange bias when forming a magnetic exchange bias layer upon the surface layer of the magnetoresistive (MR) layer. Finally, there is then formed upon the surface layer of the magnetoresistive (MR) layer the magnetic exchange bias layer. The method contemplates an magnetoresistive (MR) sensor element fabricated in accord with the method. The method is particularly useful for forming a dual stripe magnetoresistive (DSMR) sensor element by employing a single magnetic exchange bias material with separate blocking temperatures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.