Cheng T. Horng
167Patents
33h-index
70Co-inventors
93Inventor score
Filing activity: Dec 30, 1977 → Dec 28, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7449345B2 | Capping structure for enhancing dR/R of the MTJ device | Electricity | 133 | Expired |
| US6773515B2 | FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures | Emerging Cross-Sectional Technologies | 111 | Expired |
| US7262941B2 | FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures | Emerging Cross-Sectional Technologies | 104 | Expired |
| US6292336A | Giant magnetoresistive (GMR) sensor element with enhanced magnetoresistive (MR) coefficient | Physics | 96 | Expired |
| US5159508A | Magnetic head slider having a protective coating thereon | Emerging Cross-Sectional Technologies | 92 | Expired |
| US6466418B1 | Bottom spin valves with continuous spacer exchange (or hard) bias | Emerging Cross-Sectional Technologies | 90 | Expired |
| US7948044B2 | Low switching current MTJ element for ultra-high STT-RAM and a method for making the same | Emerging Cross-Sectional Technologies | 89 | Active |
| US7750421B2 | High performance MTJ element for STT-RAM and method for making the same | Electricity | 88 | Active |
| US8823118B2 | Spin torque transfer magnetic tunnel junction fabricated with a composite tunneling barrier layer | Electricity | 82 | Active |
| US4211582A | Process for making large area isolation trenches utilizing a two-step selective etching technique | Emerging Cross-Sectional Technologies | 72 | Expired |
| US8470462B2 | Structure and method for enhancing interfacial perpendicular anisotropy in CoFe(B)/MgO/CoFe(B) magnetic tunnel junctions | Emerging Cross-Sectional Technologies | 65 | Active |
| US4318751A | Self-aligned process for providing an improved high performance bipolar transistor | Emerging Cross-Sectional Technologies | 59 | Expired |
| US5175658A | Thin film magnetic head having a protective coating and method for making same | Physics | 58 | Expired |
| US7480173B2 | Spin transfer MRAM device with novel magnetic free layer | Emerging Cross-Sectional Technologies | 57 | Active |
| US7595520B2 | Capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the same | Electricity | 56 | Active |
| US8138561B2 | Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM | Electricity | 53 | Active |
| US8749003B2 | High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same | Electricity | 51 | Active |
| US7105372B2 | Magnetic tunneling junction film structure with process determined in-plane magnetic anisotropy | Electricity | 51 | Expired |
| US4381953A | Polysilicon-base self-aligned bipolar transistor process | Electricity | 47 | Expired |
| US8080432B2 | High performance MTJ element for STT-RAM and method for making the same | Electricity | 45 | Active |
| US9006704B2 | Magnetic element with improved out-of-plane anisotropy for spintronic applications | Electricity | 45 | Active |
| US5874010A | Pole trimming technique for high data rate thin film heads | Physics | 45 | Expired |
| US4338138A | Process for fabricating a bipolar transistor | Emerging Cross-Sectional Technologies | 44 | Expired |
| US6770382B1 | GMR configuration with enhanced spin filtering | Emerging Cross-Sectional Technologies | 43 | Expired |
| US7390529B2 | Free layer for CPP GMR having iron rich NiFe | Emerging Cross-Sectional Technologies | 43 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.