Kochan Ju
140Patents
26h-index
71Co-inventors
93Inventor score
Filing activity: Aug 25, 1980 → Mar 20, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6773515B2 | FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures | Emerging Cross-Sectional Technologies | 111 | Expired |
| US7262941B2 | FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures | Emerging Cross-Sectional Technologies | 104 | Expired |
| US5652687A | Planarized thin film magnetic write head with submicron trackwidth | Emerging Cross-Sectional Technologies | 100 | Expired |
| US5802700A | Method of making a planarized thin film magnetic write head with submicron trackwidth | Emerging Cross-Sectional Technologies | 98 | Expired |
| US6292336A | Giant magnetoresistive (GMR) sensor element with enhanced magnetoresistive (MR) coefficient | Physics | 96 | Expired |
| US5285340A | Thin film magnetic head with conformable pole tips | Physics | 72 | Expired |
| US6998150B2 | Method of adjusting CoFe free layer magnetostriction | Emerging Cross-Sectional Technologies | 72 | Expired |
| US5079663A | Magnetoresistive sensor with track following capability | Physics | 57 | Expired |
| US5719730A | Low fringe-field and narrow write-track magneto-resistive (MR) magnetic read-write head | Physics | 56 | Expired |
| US5452165A | Close packed magnetic head linear array | Physics | 50 | Expired |
| US9337415B1 | Perpendicular spin transfer torque (STT) memory cell with double MgO interface and CoFeB layer for enhancement of perpendicular magnetic anisotropy | Electricity | 46 | Active |
| US5285339A | Magnetoresistive read transducer having improved bias profile | Physics | 43 | Expired |
| US6770382B1 | GMR configuration with enhanced spin filtering | Emerging Cross-Sectional Technologies | 43 | Expired |
| US6322640A | Multiple thermal annealing method for forming antiferromagnetic exchange biased magnetoresistive (MR) sensor element | Emerging Cross-Sectional Technologies | 43 | Expired |
| US7285836B2 | Magnetic random access memory with stacked memory cells having oppositely-directed hard-axis biasing | Electricity | 41 | Expired |
| US5684658A | High track density dual stripe magnetoresistive (DSMR) head | Physics | 40 | Expired |
| US5843521A | Photoresist frame plated magnetic transducer pole layer employing high magnetic permeability seed layer | Emerging Cross-Sectional Technologies | 36 | Expired |
| US6103136A | Method for forming a soft adjacent layer (SAL) magnetoresistive (MR) sensor element with transversely magnetically biased soft adjacent layer (SAL) | Emerging Cross-Sectional Technologies | 35 | Expired |
| US7042682B2 | Fully shielded perpendicular recoding writer | Physics | 34 | Expired |
| US5282308A | Thin film planarization process for fabricating magnetic heads employing a stitched pole structure | Emerging Cross-Sectional Technologies | 32 | Expired |
| US7477491B2 | GMR device having an improved free layer | Emerging Cross-Sectional Technologies | 30 | Active |
| US6449131B2 | Canted longitudinal patterned exchange biased dual-stripe magnetoresistive (DSMR) sensor element and method for fabrication thereof | Emerging Cross-Sectional Technologies | 29 | Expired |
| US7453720B2 | Magnetic random access memory with stacked toggle memory cells having oppositely-directed easy-axis biasing | Electricity | 28 | Expired |
| US6937497B1 | Magnetic random access memory with stacked toggle memory cells | Physics | 27 | Expired |
| US6729014B2 | Magnetic assist read track-width definition for a lead overlay top spin-valve GMR head | Emerging Cross-Sectional Technologies | 27 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.