Method of annealing large area glass substrates
US6294219A · kind A · utility
11Cited by
11References
7Claims
0Family size
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Key dates
| Filing date | Mar 3, 1998 |
| Grant date | Sep 25, 2001 |
| Priority date | — |
| Expiry date | Mar 3, 2018 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2218/32
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film layer can be formed on a glass substrate by preheating the substrate, depositing an amorphous silicon precursor layer on the substrate at a first temperature, and annealing the substrate in a thermal processing chamber at a second temperature sufficiently higher than the first temperature to substantially reduce the hydrogen concentration in the precursor layer. The preheating and annealing steps can occur in the same thermal processing chamber. Then the precursor layer is converted to a polycrystaline silicon layer by laser annealing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.