Nitridization of the pre-ddi screen oxide
US6294430A · kind A · utility
13Cited by
8References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 31, 2000 |
| Grant date | Sep 25, 2001 |
| Priority date | — |
| Expiry date | Jan 31, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/923
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A flash memory device and a method of manufacturing the flash memory device having high reliability in which a gate stack is formed on a tunnel oxide formed on a substrate and a layer of oxide is formed on the surfaces of the gate stack and exposed surfaces of the substrate. Nitrogen is diffused into the layer of oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.