Regeneration of chemical mechanical polishing pads in-situ
US6296717A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 11, 1999 |
| Grant date | Oct 2, 2001 |
| Priority date | — |
| Expiry date | Jun 11, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30625
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
An in-situ method for regenerating a chemical-mechanical polishing pad which includes the steps of: forming the polishing pad by dispensing liquid moldable material, such as wax, polymers or water, on a polishing surface and solidifying the liquid material by reducing the temperature, allowing the moldable material to harden; distributing slurry material on the polishing pad; polishing the surface of a semiconductor wafer with a combination of the slurry material and the polishing pad; and regenerating in-situ the polishing pad. This method quickly, easily and repeatably, resurfaces and refreshes the surface on which the a semiconductor wafer is polished. The polishing pad may also include abrasives embedded therein to enhance its polishing capabilities.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.