High dielectric constant materials as gate dielectrics
US6297107A · kind A · utility
34Cited by
11References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 19, 2000 |
| Grant date | Oct 2, 2001 |
| Priority date | — |
| Expiry date | Oct 19, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure having a gate dielectric between a gate electrode and a semiconductor substrate is formed with a high dielectric metal oxide layer by replacing a sacrificial gate oxide. Embodiments include forming the metal oxide layer by applying a chemical solution deposition of a metalorganic on to an exposed surface of the substrate followed by pyrolizing the metalorganic residue to a metal oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.