Sacrificial multilayer anti-reflective coating for mos gate formation
US6297170A · kind A · utility
205Cited by
24References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 23, 1998 |
| Grant date | Oct 2, 2001 |
| Priority date | — |
| Expiry date | Jun 23, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to semiconductor devices in general, and more particularly to semiconductor devices having anti-reflective coatings to aid in the patterning of a reflective layer thereon to form, for example, a gate electrode. The invention also relates to methods for making a semiconductor having a patterned reflective layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.