Method and apparatus for processing semiconductive wafers
US6300255A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 24, 1999 |
| Grant date | Oct 9, 2001 |
| Priority date | — |
| Expiry date | Feb 24, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45512
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
There are provided a method and apparatus for forming by chemical vapor deposition on large diameter (e.g., 300 mm) semiconductive wafers thin insulating layers of silicon oxide (SiO.sub.2) having high uniformity from rim to rim across any diameter through the centers of the wafers. Such high degree of uniformity of the layers is obtained by directing separately a first reactive gas stream and a second reactive gas stream into close proximity to an exposed surface of a wafer to a be coated by the gasses with an insulating layer, the gas streams when mixed together reacting with each other to deposit an insulating layer on a wafer; forming a whirlpool-like swirling mixture of the first and second gas streams to thoroughly mix together the gasses thereof; forming a highly uniform mixture of the reactive gasses; and promptly flowing the mixture of reactive gasses over and upon the surface of the wafer. The apparatus also provides dual wafer processing chamber cavities.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.