Apparatus and method for electrically isolating an electrode in a PECVD process chamber
US6302057A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 15, 1998 |
| Grant date | Oct 16, 2001 |
| Priority date | — |
| Expiry date | Sep 15, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32577
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus for depositing a film on a substrate utilizing a plasma-enhanced chemical vapor deposition process comprises a process chamber having an electrically grounded element therein and an RF biased electrode positioned in the process chamber proximate a substrate. An insulative element is coupled between the electrode and the grounded element other than the grounded substrates, and is formed of an electrically insulative material and has an insulative surface for effectively electrically isolating the electrode from the grounded element within the process chamber. The insulative element includes at least one feature formed in the insulative surface, wherein the feature has a high effective aspect ratio for inhibiting the deposition of a film therein to thereby create an electrical discontinuity in a film which may form on the insulative surface during the plasma-enhanced chemical vapor deposition process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.