Method for resist filling and planarization of high aspect ratio features

US6303275A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Robert A. Coles · Houston, US
• John W. Golz · Manassas, US
• Qinghuang Lin · Yorktown Heights, US
• Alan C. Thomas · Gilbert, US
• Christopher J. Waskiewicz · Rexford, US
• Teresa J. Wu · Rexford, US

Key dates

• Filing date: Feb 10, 2000
• Grant date: Oct 16, 2001
• Expiry date: Feb 10, 2020

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F7/168
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A method of forming a resist layer of uniform thickness across a surface patterned with a varying density of high aspect ratio features. A selected material layer having an affinity to a resist coat to be applied over the selected material layer is applied to a wafer having a plurality of recesses before applying a resist coat. After the resist coat is applied over the selected material layer, the selected material diffuses partially into the resist coat to condition a portion of the resist coat to be insoluble in the presence of a developer which is applied after the resist coat. Those portions of the resist coat into which the selected material layer has not diffused then are removed by a developer leaving a uniform resist coat thickness across the wafer.