MOCVD metal oxide for one transistor memory
US6303502A · kind A · utility
12Cited by
11References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 6, 2000 |
| Grant date | Oct 16, 2001 |
| Priority date | — |
| Expiry date | Jun 6, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/033
Abstract
A method of fabricating a one-transistor memory includes, on a single crystal silicon substrate, depositing a bottom electrode structure on a gate oxide layer; implanting ions to form a source region and a drain region and activating the implanted ions spin coating the structure with a first ferroelectric layer; depositing a second ferroelectric layer; and annealing the structure to provide a c-axis ferroelectric orientation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.