Copper interconnect with improved electromigration resistance
US6303505A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 9, 1998 |
| Grant date | Oct 16, 2001 |
| Priority date | — |
| Expiry date | Jul 9, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Capping layer adhesion to a Cu or Cu alloy interconnect member is enhanced by treating the exposed surface of the Cu or Cu alloy interconnect member with a hydrogen plasma to substantially reduce oxides thereon, forming a thin layer of copper silicide on the treated surface and depositing the capping layer thereon. Embodiments include electroplating or electroless plating Cu or a Cu alloy to fill a damascene opening in a dielectric layer, chemical-mechianiical polishing, hydrogen plasma treatment, reacting the treated surface with silane or dichlorosilane to form a layer of copper silicide on the treated surface and depositing a silicon nitride capping layer on the thin copper silicide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.