Apparatus for reducing polymer deposition on substrate support
US6306244A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 22, 1999 |
| Grant date | Oct 23, 2001 |
| Priority date | — |
| Expiry date | Jul 22, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S156/915
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a plasma processing system for processing substrates such as semiconductor wafers, deposition of polymer in an area between a focus ring and an electrostatic chuck in a plasma processing chamber is achieved by providing a clearance gas in a gap between the chuck and the focus ring. A series of channels delivers the clearance gas to the annular gap between the outer surface of the substrate support and the inner surface of the focus ring surrounding the substrate support. The clearance gas supplied to the annular gap is preferably a gas such as helium which will not affect the wafer processing operation. In the case of plasma etching, the clearance gas is supplied at a flow rate which is sufficient to block the migration of process gas and volative byproducts thereof into the annular gap without adversely affecting edge etch performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.