Fabricating low K dielectric interconnect systems by using dummy structures to enhance process
US6309956A · kind A · utility
88Cited by
14References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 10, 1999 |
| Grant date | Oct 30, 2001 |
| Priority date | — |
| Expiry date | Aug 10, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/926
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to semiconductor devices. More specifically, the invention discloses the use of dummy structures to improve thermal conductivity, reduce dishing and strengthen layers formed with low dielectric constant materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.