Method of field implantation
US6313006A · kind A · utility
1Cited by
8References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 26, 1998 |
| Grant date | Nov 6, 2001 |
| Priority date | — |
| Expiry date | Mar 26, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/312
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of field implantation. Using a photo-resist layer as a mask, a substrate is implanted with ions to forming a selectively distributed ion field.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.