Y-gate formation using damascene processing
US6313019A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2000 |
| Grant date | Nov 6, 2001 |
| Priority date | — |
| Expiry date | Aug 22, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/978
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a Y-gate structure is provided. The method comprises the steps of providing a silicon layer having a gate oxide layer, a protection layer over the gate oxide layer, a first sacrificial layer over the protection layer and a second sacrificial layer over the first sacrificial layer. An inwardly sloping opening is formed in the second sacrificial layer and the opening is extended vertically in the first sacrificial layer. A contact material is deposited over the second sacrificial layer filling the opening with the contact material and forming a contact layer and portions of the contact material outside a gate region are removed. The first sacrificial layer and the second sacrificial layer are then removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.