Method and apparatus for improved planarity metallization by electroplating and CMP
US6319834A · kind A · utility
26Cited by
8References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 17, 2000 |
| Grant date | Nov 20, 2001 |
| Priority date | — |
| Expiry date | Aug 17, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76879
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A pattern of in-laid conductors is formed by a method utilizing electroplating and chemical-mechanical polishing (CMP). Embodiments include a first step of selectively filling recesses formed in the surface of a substrate with a metal by localized electroplating at a reduced thickness, planar-surfaced overburden or blanket layer thereon, and planarizing the surface by CMP utilizing a relatively soft CMP pad. Embodiments also include an apparatus comprising a porous pad applicator for selectively electroplating recesses formed in the surface of a workpiece.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.