Metallization structure on a fluorine-containing dielectric and a method for fabrication thereof
US6323555A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 27, 1999 |
| Grant date | Nov 27, 2001 |
| Priority date | — |
| Expiry date | Jan 27, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is related to a metallization structure on a fluorine-containing dielectric and a method for fabrication thereof. This metallization structure comprises a conductive pattern; a fluorine-containing dielectric; and a barrier layer containing a material, i.e. a near noble metal such as Co, Ni, Pt and Pd, said barrier layer comprising at least a first part, being positioned between said fluorine-containing dielectric and said conductive pattern, said first part containing at least a first and a second sub-layer, said first sub-layer contacting said fluorine-containing dielectric and being impermeable for fluorine. Particularly by depositing a layer of said material on a fluorine-containing dielectric, a stable and thin layer of a fluoride of said material is formed in a self-limiting way.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.