Semiconductor laser device
US6324200A · kind A · utility
9Cited by
11References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 20, 1999 |
| Grant date | Nov 27, 2001 |
| Priority date | — |
| Expiry date | Apr 20, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34333
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A GaN buffer layer and an Si-doped n-type GaN contact layer are formed in this order on a sapphire substrate. An n-type Al.sub.0.3 Ga.sub.0.7 N cladding layer, an n-type Al.sub.0.25 Ga.sub.0.75 N optical guide layer, a multi-quantum well active layer, in which Al.sub.0.2 Ga.sub.0.8 N well layers and Al.sub.0.25 Ga.sub.0.75 N barrier layers are alternately stacked, an Mg-doped p-type Al.sub.0.25 Ga.sub.0.75 N optical guide layer, a p-type Al.sub.0.4 Ga.sub.0.6 N.sub.0.98 P.sub.0.02 cladding layer and a p-type GaN contact layer are stacked in this order on an active region on the upper surface of the n-type contact layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.