Process for depositing a SiOx film having reduced intrinsic stress and/or reduced hydrogen content
US6326064A · kind A · utility
22Cited by
15References
35Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 29, 1999 |
| Grant date | Dec 4, 2001 |
| Priority date | — |
| Expiry date | Mar 29, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/44
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for reducing intrinsic stress and/or hydrogen content of a SiO.sub.x film grown by chemical vapor deposition. The process is applicable to plasma-enhanced and electron cyclotron resonance chemical vapor deposition of silicon dioxide wherein a vapor phase etchant is introduced while growing the silicon dioxide film. The presence of the etchant during the plasma deposition process allows for selective removal of high energy silicon dioxide molecules in the growing film thus reducing intrinsic stress within the film. The use of halogen etchants further reduces the amount of hydrogen present as hydroxyl within the film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.