Semiconductor device including an interface layer containing chlorine
US6326658A · kind A · utility
26Cited by
6References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 24, 1999 |
| Grant date | Dec 4, 2001 |
| Priority date | — |
| Expiry date | Sep 24, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/0385
Abstract
A buried strap is formed after forming an SiC layer on the side surface of a trench in order to suppress the epitaxial growth of Si from the side surface (single crystal Si) of the trench to the buried strap (polycrystalline Si) without causing an increase in the contact resistance in the post process accompanied by high temperature after formation of the buried strap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.