Takeshi Hamamoto
107Patents
25h-index
98Co-inventors
93Inventor score
Filing activity: Feb 1, 1989 → Jun 30, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5698869A | Insulated-gate transistor having narrow-bandgap-source | Electricity | 301 | Expired |
| US7609551B2 | Semiconductor memory device | Electricity | 236 | Active |
| US6087691A | Semiconductor device having lower minority carrier noise | Electricity | 119 | Expired |
| US5319589A | Dynamic content addressable memory device and a method of operating thereof | Physics | 111 | Expired |
| US6337824B1 | Dynamic semiconductor memory device with reduced current consumption in sensing operation | Physics | 63 | Expired |
| US6489819B1 | Clock synchronous semiconductor memory device allowing testing by low speed tester | Physics | 52 | Expired |
| US6417715B2 | Clock generation circuit generating internal clock of small variation in phase difference from external clock, and semiconductor memory device including such clock generation circuit | Electricity | 51 | Expired |
| US4965767A | Associative memory having simplified memory cell circuitry | Physics | 51 | Expired |
| US6166989A | Clock synchronous type semiconductor memory device that can switch word configuration | Physics | 50 | Expired |
| US5838038A | Dynamic random access memory device with the combined open/folded bit-line pair arrangement | Physics | 47 | Expired |
| US5764562A | Semiconductor memory device | Physics | 46 | Expired |
| US5508541A | Random access memory device with trench-type one-transistor memory cell structure | Electricity | 45 | Expired |
| US5235199A | Semiconductor memory with pad electrode and bit line under stacked capacitor | Emerging Cross-Sectional Technologies | 41 | Expired |
| US5936459A | Internal potential generating circuit and boosted potential generating unit using pumping operation | Electricity | 40 | Expired |
| US5477071A | MOS random access memory having array of trench type one-capacitor/one-transistor memory cells | Electricity | 37 | Expired |
| US5146300A | Semiconductor integrated circuit device having improved stacked capacitor and manufacturing method therefor | Physics | 36 | Expired |
| US5895946A | MOS random access memory having array of trench type one-capacitor/one-transistor memory cells | Electricity | 31 | Expired |
| US6333895A | Clock synchronous semiconductor device having a reduced clock access time | Physics | 31 | Expired |
| US5736760A | Random access memory device with trench-type one-transistor memory cell structure | Electricity | 27 | Expired |
| US5387532A | Semiconductor memory having capacitor electrode formed above bit line | Emerging Cross-Sectional Technologies | 27 | Expired |
| US6850454B2 | Semiconductor memory device with reduced current consumption during standby state | Physics | 26 | Expired |
| US6326658A | Semiconductor device including an interface layer containing chlorine | Electricity | 26 | Expired |
| US6377512B1 | Clock synchronous type semiconductor memory device that can switch word configuration | Physics | 25 | Expired |
| US7977738B2 | Semiconductor memory device and manufacturing method thereof | Physics | 25 | Active |
| US5388066A | Content addressable memory device and a method of disabling a coincidence word thereof | Physics | 25 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.