Method for multilayer CVD processing in a single chamber
US6338874B1 · kind B1 · utility
26Cited by
24References
24Claims
0Family size
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Key dates
| Filing date | Dec 14, 1995 |
| Grant date | Jan 15, 2002 |
| Priority date | — |
| Expiry date | Dec 14, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0321
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Multilayer deposition of thin films onto glass substrates to form thin film transistors can be carried out in the same chamber under similar reaction conditions at high deposition rates. We have found that sequential thin layers of silicon nitride and amorphous silicon can be deposited in the same chamber by chemical vapor deposition using pressure of at least 0.5 Torr and substrate temperatures of about 250-370° C. Subsequently deposited different thin films can also be deposited in separate chemical vapor deposition chambers which are part of a single multichamber vacuum system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.