Thin film capacitor on ceramic
US6339527B1 · kind B1 · utility
25Cited by
24References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 22, 1999 |
| Grant date | Jan 15, 2002 |
| Priority date | — |
| Expiry date | Dec 22, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02244
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The capacitor on a ceramic substrate one by unique film metallization including in one embodiment an in situ oxidation of titanium to create a metal oxide capacitor. The combination of metals when used with the appropriate optimized oxidation conditions and parameters ensures a high yielding capacitor with high capacitance in absence of noble metals and with ease of manufacture providing a low cost, high yield capacitor on ceramic.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.