Techniques for improving etch rate uniformity
US6344105B1 · kind B1 · utility
55Cited by
20References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 30, 1999 |
| Grant date | Feb 5, 2002 |
| Priority date | — |
| Expiry date | Jun 30, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S156/915
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Improved methods and apparatus for ion-assisted etch processing in a plasma processing system are disclosed. In accordance with various aspects of the invention, an elevated edge ring, a grooved edge ring, and a RF coupled edge ring are disclosed. The invention operates to improve etch rate uniformity across a substrate (wafer). Etch rate uniformity improvement provided by the invention not only improves fabrication yields but also is cost efficient and does not risk particulate and/or heavy metal contamination.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.