Semiconductor device with an undulating base region and method therefor
US6344379B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 22, 1999 |
| Grant date | Feb 5, 2002 |
| Priority date | — |
| Expiry date | Oct 22, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
A transistor (30) uses a single continuous base region (40) with an undulating structure. The semiconductor device is an insulated gate field effect transistor having a semiconductor substrate with a plurality of doped base branches, which extend into the semiconductor substrate, form into a single base region for the entire transistor. Each of the plurality of base branches (82) is undulating and of substantially constant width, and each of the base branches undulates in-phase with the immediately adjacent base branches. A continuous gate layer (34) overlies the semiconductor substrate and is self-aligned to the plurality of base branches. The undulating structure of the base region improves channel density, and thus lowers on-resistance, and the use of a single base region ensures that all portions of the base region throughout the device will be at a substantially constant electric potential.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.