Manufacturing method for semiconductor metalization barrier
US6344410B1 · kind B1 · utility
248Cited by
12References
8Claims
0Family size
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Key dates
| Filing date | Aug 8, 2000 |
| Grant date | Feb 5, 2002 |
| Priority date | — |
| Expiry date | Aug 8, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor metalization barrier, and manufacturing method therefor, is provided which is a stack of a cobalt layer and cobalt tungsten layer deposited on a copper bonding pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.