Patent · US Expired

Data retention characteristics as a result of high temperature bake

US6344994B1 · kind B1 · utility

34Cited by

32References

26Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Darlene Hamilton · San Jose, US
Yider Wu · Campbell, US
Michael Han · San Jose, US

Key dates

Filing date	Feb 28, 2001
Grant date	Feb 5, 2002
Priority date	—
Expiry date	Mar 8, 2021

Classification

Technology area (CPC G)Physics
CPC primaryG11C16/3404
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Dummy wordlines are provided between gaps of blocks of memory cells to compensate for higher charge loss at higher stress temperatures exhibited at edge wordlines of blocks of memory cells having large gaps. The dummy wordlines minimize the gap between the blocks. The dummy wordlines can be positioned between the blocks. Alternatively, the wordline width for the last block or sector wordline can be changed or different nitride used with less conductance in high temperatures. The dummy wordlines are typically ignored in normal operations on the memory.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.