Semiconductor device and production thereof
US6348396B1 · kind B1 · utility
7Cited by
11References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2000 |
| Grant date | Feb 19, 2002 |
| Priority date | — |
| Expiry date | Nov 1, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76232
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having a SGI structure produced by selecting D, T and R values for satisfying the formula:D<0.4(−100R+7)−1(−230 T+14.5),wherein D is a width of an element formation region, T is a thermal oxidation amount of a groove in terms of microns, and R is a curvature radius at an end bottom portion of the groove, has excellent properties such as reduced in stress generated at bottom portions of grooves in a silicon substrate and not generating abnormal junction leakage current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.