Spin dependent tunneling memory
US6349053B1 · kind B1 · utility
11Cited by
1References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2001 |
| Grant date | Feb 19, 2002 |
| Priority date | — |
| Expiry date | Jun 26, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A digital data memory having a bit structure in a memory cell based on a dielectric intermediate separating material with two major surfaces having thereon an anisotropic ferromagnetic thin-film of differing thicknesses. These bit structures are fabricated within structural extent limits to operate satisfactorily, and are fabricated as series connected members of storage line structures. A corresponding conductive word line structure adjacent corresponding ones of these memory cells is used for selecting or operating them, or both, in data storage and retrieval operations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.