Increased polish removal rate of dielectric layers using fixed abrasive pads
US6350692B1 · kind B1 · utility
3Cited by
6References
27Claims
0Family size
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Key dates
| Filing date | Dec 14, 2000 |
| Grant date | Feb 26, 2002 |
| Priority date | — |
| Expiry date | Dec 14, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for polishing a dielectric layer containing silicon provides a fluorine-based inorganic compound during a polishing process. The dielectric layer is polished in the presence of the fluorine based compound to accelerate a polishing rate of the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.