Mini-batch process chamber
US6352593B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 11, 1997 |
| Grant date | Mar 5, 2002 |
| Priority date | — |
| Expiry date | Aug 11, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67115
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A semiconductor wafer or flat panel display process chamber for thermally driven, chemical vapor deposition, and/or plasma enhanced chemical vapor deposition processes includes a chamber for loading/unloading the substrate to be processed, and another chamber for processing. The substrate is heated with multiple zone radiant heaters arranged around the processing chamber to provide uniform heating. Process gases are injected into and exhausted in a cross flow fashion. The chamber may be used for plasma processing. Shield plates prevent deposition of reactant species on chamber walls, and also serve to diffuse heat uniformly the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.