Biased shield in a magnetron sputter reactor
US6358376B1 · kind B1 · utility
48Cited by
8References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 10, 2000 |
| Grant date | Mar 19, 2002 |
| Priority date | — |
| Expiry date | Jul 10, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3441
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetron sputter reactor and its method of operation which produces a high fraction of sputtered metal ions and in which the metal ions are confined by a positively biased shield and attracted to a negatively biased pedestal electrode supporting the wafer to be sputter coated. The shield may be positively biased to between 10 and 50VDC, preferably between 15 and 40VDC while the negative self-bias on the pedestal is typical tens of volts. A grounded shield is positioned between the target and the biased shield.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.